![ZVN4310ASTZ Cover](http://media.oemstron.com/oemstron/datasheet/sm/zvn4310astz-0001.jpg)
Datasheet | ZVN4310ASTZ |
File Size | 57.02 KB |
Total Pages | 3 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | ZVN4310ASTZ, ZVN4310ASTOB, ZVN4310A |
Description | MOSFET N-CH 100V 0.9A TO92-3, MOSFET N-CH 100V 0.9A TO92-3, MOSFET N-CH 100V 0.9A TO92-3 |
ZVN4310ASTZ - Diodes Incorporated
![ZVN4310ASTZ Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/zvn4310astz-0001.jpg)
![ZVN4310ASTZ Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/zvn4310astz-0002.jpg)
![ZVN4310ASTZ Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/zvn4310astz-0003.jpg)
The Products You May Be Interested In
![]() |
ZVN4310ASTZ | Diodes Incorporated | MOSFET N-CH 100V 0.9A TO92-3 | 166 More on Order |
![]() |
ZVN4310ASTOB | Diodes Incorporated | MOSFET N-CH 100V 0.9A TO92-3 | 385 More on Order |
![]() |
ZVN4310A | Diodes Incorporated | MOSFET N-CH 100V 0.9A TO92-3 | 8088 More on Order |
URL Link
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 500mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 500mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 500mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |