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ZVP2110ASTOB Datasheet

ZVP2110ASTOB Cover
DatasheetZVP2110ASTOB
File Size70.8 KB
Total Pages3
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts ZVP2110ASTOB, ZVP2110ASTOA, ZVP2110ASTZ, ZVP2110A
Description MOSFET P-CH 100V 0.23A TO92-3, MOSFET P-CH 100V 0.23A TO92-3, MOSFET P-CH 100V 0.23A TO92-3, MOSFET P-CH 100V 0.23A TO92-3

ZVP2110ASTOB - Diodes Incorporated

ZVP2110ASTOB Datasheet Page 1
ZVP2110ASTOB Datasheet Page 2
ZVP2110ASTOB Datasheet Page 3

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URL Link

ZVP2110ASTOB

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZVP2110ASTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZVP2110ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZVP2110A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)