Datasheet | ZVP4525E6TC |
File Size | 312.68 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | ZVP4525E6TC, ZVP4525E6TA |
Description | MOSFET P-CH 250V 0.197A SOT23-6, MOSFET P-CH 250V 0.197A SOT-23-6 |
ZVP4525E6TC - Diodes Incorporated
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ZVP4525E6TA | Diodes Incorporated | MOSFET P-CH 250V 0.197A SOT-23-6 | 18431 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 197mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V Rds On (Max) @ Id, Vgs 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.45nC @ 10V Vgs (Max) ±40V Input Capacitance (Ciss) (Max) @ Vds 73pF @ 25V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-6 Package / Case SOT-23-6 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 197mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V Rds On (Max) @ Id, Vgs 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.45nC @ 10V Vgs (Max) ±40V Input Capacitance (Ciss) (Max) @ Vds 73pF @ 25V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-6 Package / Case SOT-23-6 |