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| Datasheet | ZXMHN6A07T8TA |
| File Size | 592.95 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | ZXMHN6A07T8TA |
| Description | MOSFET 4N-CH 60V 1.4A SM8 |
ZXMHN6A07T8TA - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/ZXMHN6A07T8TA
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Manufacturer Diodes Incorporated Series - FET Type 4 N-Channel (H-Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.4A Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 166pF @ 40V Power - Max 1.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-223-8 Supplier Device Package SM8 |