Semiconductors
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| Datasheet | ZXMN10A07FTC |
| File Size | 265.74 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ZXMN10A07FTC, ZXMN10A07FTA |
| Description | MOSFET N-CH 100V 700MA SOT23-3, MOSFET N-CH 100V 700MA SOT23-3 |
ZXMN10A07FTC - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 700mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 138pF @ 50V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 700mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 138pF @ 50V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |