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| Datasheet | ZXMN10A08GTA |
| File Size | 517.96 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | ZXMN10A08GTA |
| Description | MOSFET N-CH 100V 2A SOT223 |
ZXMN10A08GTA - Diodes Incorporated
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ZXMN10A08GTA | Diodes Incorporated | MOSFET N-CH 100V 2A SOT223 | 30961 More on Order |
URL Link
www.oemstron.com/datasheet/ZXMN10A08GTA
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 250mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 50V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |