Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ZXMN2A04DN8TC |
| File Size | 179.46 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ZXMN2A04DN8TC, ZXMN2A04DN8TA |
| Description | MOSFET 2N-CH 20V 5.9A 8SOIC, MOSFET 2N-CH 20V 5.9A 8-SOIC |
ZXMN2A04DN8TC - Diodes Incorporated
The Products You May Be Interested In
 |
ZXMN2A04DN8TC | Diodes Incorporated | MOSFET 2N-CH 20V 5.9A 8SOIC | 403 More on Order |
 |
ZXMN2A04DN8TA | Diodes Incorporated | MOSFET 2N-CH 20V 5.9A 8-SOIC | 252 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.9A Rds On (Max) @ Id, Vgs 25mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V Power - Max 1.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.9A Rds On (Max) @ Id, Vgs 25mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V Power - Max 1.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |