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Datasheet | ZXMN6A09DN8TA |
File Size | 584.41 KB |
Total Pages | 8 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | ZXMN6A09DN8TA |
Description | MOSFET 2N-CH 60V 4.3A 8-SOIC |
ZXMN6A09DN8TA - Diodes Incorporated
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ZXMN6A09DN8TA | Diodes Incorporated | MOSFET 2N-CH 60V 4.3A 8-SOIC | 2539 More on Order |
URL Link
www.oemstron.com/datasheet/ZXMN6A09DN8TA
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.3A Rds On (Max) @ Id, Vgs 40mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |