Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ZXMN6A11DN8TC |
| File Size | 649.62 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ZXMN6A11DN8TC, ZXMN6A11DN8TA |
| Description | MOSFET 2N-CH 60V 2.5A 8SOIC, MOSFET 2N-CH 60V 2.5A 8-SOIC |
ZXMN6A11DN8TC - Diodes Incorporated
The Products You May Be Interested In
 |
ZXMN6A11DN8TC | Diodes Incorporated | MOSFET 2N-CH 60V 2.5A 8SOIC | 464 More on Order |
 |
ZXMN6A11DN8TA | Diodes Incorporated | MOSFET 2N-CH 60V 2.5A 8-SOIC | 5839 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 40V Power - Max 1.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 40V Power - Max 1.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |