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| Part Number | 1N5407GHB0G |
| OEMstron Part # | 1N5407GHB0G |
| Manufacturer | Taiwan Semiconductor Corporation |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Description | DIODE GEN PURP 800V 3A DO201AD |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | 1N5407GHB0G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
1N5407GHB0G Specifications
| Part Number | 1N5407GHB0G | |
| Brand | Taiwan Semiconductor Corporation | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Diodes & Rectifiers | |
| Subcategory | Rectifiers - Single | |
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | Automotive, AEC-Q101 | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 800V | |
| Current - Average Rectified (Io) | 3A | |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 5µA @ 800V | |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | DO-201AD, Axial | |
| Supplier Device Package | DO-201AD | |
| Operating Temperature - Junction | -55°C ~ 150°C |
1N5407GHB0G Documents
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| Part Number | Description | Stock |
|
1N5407GHB0G D# 1N5407GHB0G-ND Taiwan Semiconductor Manufacturing Company Limited |
DIODE GEN PURP 800V 3A DO201AD |
Temporarily Out of Stock |
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| In Stock | 460 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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