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| Part Number | 2N5012S |
| OEMstron Part # | 2N5012S |
| Manufacturer | Microsemi |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single |
| Description | TRANSISTOR NPN TO-39 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2N5012S PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
2N5012S Specifications
| Part Number | 2N5012S | |
| Brand | Microsemi | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | Military, MIL-PRF-19500/727 | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 200mA | |
| Voltage - Collector Emitter Breakdown (Max) | 700V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 5mA, 25mA | |
| Current - Collector Cutoff (Max) | 10nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V | |
| Power - Max | 1W | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Supplier Device Package | TO-39 (TO-205AD) |
2N5012S Documents
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| Minimum | 1 |
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