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2SA1930(LBS2MATQ,M

2SA1930(LBS2MATQ,M
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For Reference Only

Part Number 2SA1930(LBS2MATQ,M
OEMstron Part # 2SA1930-LBS2MATQ-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 2A 180V TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SA1930(LBS2MATQ,M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2SA1930(LBS2MATQ Specifications

Part Number 2SA1930(LBS2MATQ,M
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 180V
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 2W
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS

2SA1930(LBS2MATQ,M Documents

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Part Number Description Stock

2SA1930(LBS2MATQ,M

D# 2SA1930(LBS2MATQM-ND

Toshiba America Electronic Components

TRANS PNP 2A 180V TO220-3

Limited Supply - Call

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