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| Part Number | 2SA965-O(TE6,F,M) |
| OEMstron Part # | 2SA965-O-TE6-F-M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single |
| Description | TRANS PNP 800MA 120V TO226-3 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2SA965-O(TE6,F,M) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
2SA965-O(TE6 Specifications
| Part Number | 2SA965-O(TE6,F,M) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 800mA | |
| Voltage - Collector Emitter Breakdown (Max) | 120V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V | |
| Power - Max | 900mW | |
| Frequency - Transition | 120MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Long Body | |
| Supplier Device Package | LSTM |
2SA965-O(TE6,F,M) Documents
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| Part Number | Description | Stock |
|
2SA965-O(TE6,F,M) D# 2SA965-O(TE6FM)-ND Toshiba America Electronic Components |
TRANS PNP 800MA 120V TO226-3 |
Limited Supply - Call |
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