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Part Number | 2SA965-Y,T6KOJPF(J |
OEMstron Part # | 2SA965-Y-T6KOJPF-J |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Single |
Description | TRANS PNP 800MA 120V TO226-3 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | 2SA965-Y,T6KOJPF(J PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
2SA965-Y Specifications
Part Number | 2SA965-Y,T6KOJPF(J | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | PNP | |
Current - Collector (Ic) (Max) | 800mA | |
Voltage - Collector Emitter Breakdown (Max) | 120V | |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V | |
Power - Max | 900mW | |
Frequency - Transition | 120MHz | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 Long Body | |
Supplier Device Package | LSTM |
2SA965-Y,T6KOJPF(J Documents

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Part Number | Description | Stock |
2SA965-Y,T6KOJPF(J D# 2SA965-YT6KOJPF(J-ND Toshiba America Electronic Components |
TRANS PNP 800MA 120V TO226-3 |
Limited Supply - Call |
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