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| Part Number | APT70GR65B2SCD30 |
| OEMstron Part # | APT70GR65B2SCD30 |
| Manufacturer | Microsemi |
| Category | Semiconductors › Transistors › IGBTs - Single |
| Description | INSULATED GATE BIPOLAR TRANSISTO |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | APT70GR65B2SCD30 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
APT70GR65B2SCD30 Specifications
| Part Number | APT70GR65B2SCD30 | |
| Brand | Microsemi | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | IGBTs - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | * | |
| IGBT Type | NPT | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 134A | |
| Current - Collector Pulsed (Icm) | 260A | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A | |
| Power - Max | 595W | |
| Switching Energy | - | |
| Input Type | - | |
| Gate Charge | 305nC | |
| Td (on/off) @ 25°C | 19ns/170ns | |
| Test Condition | 433V, 70A, 4.3Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | T-MAX™ [B2] |
APT70GR65B2SCD30 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
APT70GR65B2SCD30 D# APT70GR65B2SCD30-ND Microsemi Corporation |
INSULATED GATE BIPOLAR TRANSISTO |
Limited Supply - Call |
| Part Number | Description | Stock |
|
APT70GR65B2SCD30 Microchip Technology Inc |
OEM/CM ONLY |
261 |
| Part Number | Description | Stock |
|
APT70GR65B2SCD30 D# 494-APT70GR65B2SCD30 Microchip Technology Inc |
IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 RoHS: Compliant
|
3 |
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