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| Part Number | APTM100VDA35T3G |
| OEMstron Part # | APTM100VDA35T3G |
| Manufacturer | Microsemi |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 1000V 22A SP3 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | APTM100VDA35T3G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
APTM100VDA35T3G Specifications
| Part Number | APTM100VDA35T3G | |
| Brand | Microsemi | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 7® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 22A | |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V | |
| Power - Max | 390W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Supplier Device Package | SP3 |
APTM100VDA35T3G Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
APTM100VDA35T3G Microsemi Corporation |
MOSFET 2N-CH 1000V 22A SP3 |
Contact Us |
| Part Number | Description | Stock |
|
APTM100VDA35T3G D# APTM100VDA35T3G-ND Microsemi Corporation |
MOSFET 2N-CH 1000V 22A SP3 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
APTM100VDA35T3G D# NS-APTM100VDA35T3G Microsemi Corporation |
OEM/CM ONLY |
6893 |
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| In Stock | 484 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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