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Part Number | BCR10PNE6327BTSA1 |
OEMstron Part # | BCR10PNE6327BTSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
Description | TRANS NPN/PNP PREBIAS SOT363 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | BCR10PNE6327BTSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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BCR10PNE6327BTSA1 Specifications
Part Number | BCR10PNE6327BTSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
Manufacturer | Infineon Technologies | |
Series | - | |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 10kOhms | |
Resistor - Emitter Base (R2) | 10kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
Current - Collector Cutoff (Max) | - | |
Frequency - Transition | 130MHz | |
Power - Max | 250mW | |
Mounting Type | Surface Mount | |
Package / Case | 6-VSSOP, SC-88, SOT-363 | |
Supplier Device Package | PG-SOT363-6 |
BCR10PNE6327BTSA1 Documents
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Part Number | Description | Stock |
BCR10PNE6327BTSA1 D# BCR10PNE6327BTSA1TR-ND Infineon Technologies AG |
TRANS NPN/PNP PREBIAS SOT363 |
Limited Supply - Call |
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