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Part Number | BSM100GB120DN2HOSA1 |
OEMstron Part # | BSM100GB120DN2HOSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › IGBTs - Modules |
Description | IGBT 2 MED POWER 62MM-1 |
Lifecycle | Not For New Designs |
RoHS | No RoHS Information |
EDA/CAD Models | BSM100GB120DN2HOSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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BSM100GB120DN2HOSA1 Specifications
Part Number | BSM100GB120DN2HOSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Not For New Designs | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | IGBTs - Modules | |
Manufacturer | Infineon Technologies | |
Series | - | |
IGBT Type | - | |
Configuration | Half Bridge | |
Voltage - Collector Emitter Breakdown (Max) | 1200V | |
Current - Collector (Ic) (Max) | 150A | |
Power - Max | 800W | |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A | |
Current - Collector Cutoff (Max) | 2mA | |
Input Capacitance (Cies) @ Vce | 6.5nF @ 25V | |
Input | Standard | |
NTC Thermistor | No | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | Module |
BSM100GB120DN2HOSA1 Documents
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