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| Part Number | CDBGBSC20650-G |
| OEMstron Part # | CDBGBSC20650-G |
| Manufacturer | Comchip Technology |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Description | DIODE DUAL SILICON CARBIDE POWER |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | CDBGBSC20650-G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 25 - Mar 2 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
CDBGBSC20650-G Specifications
| Part Number | CDBGBSC20650-G | |
| Brand | Comchip Technology | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Diodes & Rectifiers | |
| Subcategory | Rectifiers - Arrays | |
| Manufacturer | Comchip Technology | |
| Series | - | |
| Diode Configuration | 1 Pair Common Cathode | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Current - Average Rectified (Io) (per Diode) | 33A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 100µA @ 650V | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 |
CDBGBSC20650-G Documents
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