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Part Number | DF200R12W1H3B27BOMA1 |
OEMstron Part # | DF200R12W1H3B27BOMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › IGBTs - Modules |
Description | IGBT MODULE VCES 1200V 200A |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | DF200R12W1H3B27BOMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
DF200R12W1H3B27BOMA1 Specifications
Part Number | DF200R12W1H3B27BOMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | IGBTs - Modules | |
Manufacturer | Infineon Technologies | |
Series | - | |
IGBT Type | - | |
Configuration | 2 Independent | |
Voltage - Collector Emitter Breakdown (Max) | 1200V | |
Current - Collector (Ic) (Max) | 30A | |
Power - Max | 375W | |
Vce(on) (Max) @ Vge, Ic | 1.3V @ 15V, 30A | |
Current - Collector Cutoff (Max) | 1mA | |
Input Capacitance (Cies) @ Vce | 2nF @ 25V | |
Input | Standard | |
NTC Thermistor | Yes | |
Operating Temperature | -40°C ~ 150°C | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | Module |
DF200R12W1H3B27BOMA1 Documents

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