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| Part Number | DMT10H017LPD-13 |
| OEMstron Part # | DMT10H017LPD-13 |
| Manufacturer | Diodes Incorporated |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET BVDSS: 61V-100V POWERDI50 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | DMT10H017LPD-13 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
DMT10H017LPD-13 Specifications
| Part Number | DMT10H017LPD-13 | |
| Brand | Diodes Incorporated | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Diodes Incorporated | |
| Series | Automotive, AEC-Q101 | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 54.7A (Tc) | |
| Rds On (Max) @ Id, Vgs | 17.4mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 28.6nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1986pF @ 50V | |
| Power - Max | 2.2W (Ta), 78W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PowerDI5060-8 |
DMT10H017LPD-13 Documents
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