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| Part Number | EPC2100ENGRT |
| OEMstron Part # | EPC2100ENGRT |
| Manufacturer | EPC |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | GANFET 2 N-CH 30V 9.5A/38A DIE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2100ENGRT PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
EPC2100ENGRT Specifications
| Part Number | EPC2100ENGRT | |
| Brand | EPC | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | EPC | |
| Series | eGaN® | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Ta) | |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
EPC2100ENGRT Documents
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| Part Number | Description | Stock |
|
EPC2100ENGRT D# 917-EPC2100ENGRTR-ND Efficient Power Conversion |
GANFET 2 N-CH 30V 9.5A/38A DIE |
Temporarily Out of Stock |
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| In Stock | 4,487 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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