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For Reference Only
| Part Number | EPC2101 |
| OEMstron Part # | EPC2101 |
| Manufacturer | EPC |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | GAN TRANS ASYMMETRICAL HALF BRID |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2101 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
EPC2101 Specifications
| Part Number | EPC2101 | |
| Brand | EPC | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | EPC | |
| Series | eGaN® | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A | |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA, 2.5V @ 12mA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V, 12nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V, 1200pF @ 30V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
EPC2101 Documents
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