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Part Number | EPC2101 |
OEMstron Part # | EPC2101 |
Manufacturer | EPC |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | GAN TRANS ASYMMETRICAL HALF BRID |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | EPC2101 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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EPC2101 Specifications
Part Number | EPC2101 | |
Brand | EPC | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | EPC | |
Series | eGaN® | |
FET Type | 2 N-Channel (Half Bridge) | |
FET Feature | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A | |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 3mA, 2.5V @ 12mA | |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V, 12nC @ 5V | |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V, 1200pF @ 30V | |
Power - Max | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | Die | |
Supplier Device Package | Die |
EPC2101 Documents
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