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Part Number | EPC2106 |
OEMstron Part # | EPC2106 |
Manufacturer | EPC |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | GANFET TRANS SYM 100V BUMPED DIE |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | EPC2106 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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EPC2106 Specifications
Part Number | EPC2106 | |
Brand | EPC | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | EPC | |
Series | eGaN® | |
FET Type | 2 N-Channel (Half Bridge) | |
FET Feature | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 1.7A | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 600µA | |
Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 5V | |
Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 50V | |
Power - Max | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | Die | |
Supplier Device Package | Die |
EPC2106 Documents
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