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FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1
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For Reference Only

Part Number FF6MR12W2M1B11BOMA1
OEMstron Part # FF6MR12W2M1B11BOMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET MODULE 1200V 200A
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models FF6MR12W2M1B11BOMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 6 - Mar 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

FF6MR12W2M1B11BOMA1 Specifications

Part Number FF6MR12W2M1B11BOMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Infineon Technologies
Series CoolSiC™+
FET Type 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 200A (Tj)
Rds On (Max) @ Id, Vgs 5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V
Power - Max 20mW (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY2BM-2

FF6MR12W2M1B11BOMA1 Documents

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