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| Part Number | HN1B04FU-Y(T5L,F,T |
| OEMstron Part # | HN1B04FU-Y-T5L-F-T |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays |
| Description | TRANS NPN/PNP 50V 0.15A US6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | HN1B04FU-Y(T5L,F,T PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 22 - Jan 27 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
HN1B04FU-Y(T5L Specifications
| Part Number | HN1B04FU-Y(T5L,F,T | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Arrays | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN, PNP | |
| Current - Collector (Ic) (Max) | 150mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V | |
| Power - Max | 200mW | |
| Frequency - Transition | 150MHz | |
| Operating Temperature | 125°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
HN1B04FU-Y(T5L,F,T Documents
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| Part Number | Description | Stock |
|
HN1B04FU-Y(T5L,F,T D# HN1B04FU-Y(T5LFTCT-ND Toshiba America Electronic Components |
TRANS NPN/PNP 50V 0.15A US6 |
190 In Stock |
| Part Number | Description | Stock |
|
HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage |
TRANS NPN/PNP 50V 0.15A US6 RoHS: Compliant
|
190 |
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