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| Part Number | HN3C10FUTE85LF |
| OEMstron Part # | HN3C10FUTE85LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - RF |
| Description | RF TRANS 2 NPN 12V 7GHZ US6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | HN3C10FUTE85LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 26 - Jan 31 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
HN3C10FUTE85LF Specifications
| Part Number | HN3C10FUTE85LF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - RF | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | 2 NPN (Dual) | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 7GHz | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz | |
| Gain | 11.5dB | |
| Power - Max | 200mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V | |
| Current - Collector (Ic) (Max) | 80mA | |
| Operating Temperature | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
HN3C10FUTE85LF Documents
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| Part Number | Description | Stock |
|
HN3C10FUTE85LF Toshiba America Electronic Components |
TRANSISTOR NPN US6 |
Contact Us |
| Part Number | Description | Stock |
|
HN3C10FUTE85LF D# HN3C10FUTE85LFCT-ND Toshiba America Electronic Components |
RF TRANS 2 NPN 12V 7GHZ US6 |
111 In Stock |
| Part Number | Description | Stock |
|
HN3C10FUTE85LF D# NS-HN3C10FUTE85LF Toshiba Semiconductor and Storage |
OEM/CM ONLY |
3059 |
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| In Stock | 458 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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