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Part Number | HN4B01JE(TE85L,F) |
OEMstron Part # | HN4B01JE-TE85L-F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays |
Description | TRANS NPN/PNP 50V 0.15A ESV PLN |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | HN4B01JE(TE85L,F) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
HN4B01JE(TE85L Specifications
Part Number | HN4B01JE(TE85L,F) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | NPN, PNP (Emitter Coupled) | |
Current - Collector (Ic) (Max) | 150mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10MA, 100MA | |
Power - Max | 100mW | |
Frequency - Transition | 80MHz | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | SOT-553 | |
Supplier Device Package | ESV |
HN4B01JE(TE85L,F) Documents

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Part Number | Description | Stock |
HN4B01JE(TE85L,F) D# HN4B01JE(TE85LF)CT-ND Toshiba America Electronic Components |
TRANS NPN/PNP 50V 0.15A ESV PLN |
3740 In Stock |
Part Number | Description | Stock |
HN4B01JETE85LF Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
3909 |
Part Number | Description | Stock |
HN4B01JETE85LF Toshiba America Electronic Components |
OEM/CM ONLY |
3386 |
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