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| Part Number | MT29F4T08EYCBBG9-37ES:B TR |
| OEMstron Part # | MT29F4T08EYCBBG9-37ES-B-TR |
| Manufacturer | Micron Technology Inc. |
| Category | Semiconductors › Memory ICs › Memory |
| Description | IC FLASH 4T PARALLEL 267MHZ |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | MT29F4T08EYCBBG9-37ES:B TR PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
MT29F4T08EYCBBG9-37ES:B TR Specifications
| Part Number | MT29F4T08EYCBBG9-37ES:B TR | |
| Brand | Micron Technology Inc. | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Memory ICs | |
| Subcategory | Memory | |
| Manufacturer | Micron Technology Inc. | |
| Series | - | |
| Memory Type | Non-Volatile | |
| Memory Format | FLASH | |
| Technology | FLASH - NAND | |
| Memory Size | 4Tb (512G x 8) | |
| Memory Interface | Parallel | |
| Clock Frequency | 267MHz | |
| Write Cycle Time - Word, Page | - | |
| Access Time | - | |
| Voltage - Supply | 2.7V ~ 3.6V | |
| Operating Temperature | 0°C ~ 70°C (TA) | |
| Mounting Type | - | |
| Package / Case | - | |
| Supplier Device Package | - |
MT29F4T08EYCBBG9-37ES:B TR Documents
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| Part Number | Description | Stock |
|
MT29F4T08EYCBBG9-37ES:B TR D# MT29F4T08EYCBBG9-37ES:BTR-ND Micron Technology Inc |
IC FLASH 4TB PARALLEL 267MHZ |
Temporarily Out of Stock |
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