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Part Number | PBRN113ES,126 |
OEMstron Part # | PBRN113ES-126 |
Manufacturer | NXP |
Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS NPN 0.7W TO92-3 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | PBRN113ES,126 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
PBRN113ES Specifications
Part Number | PBRN113ES,126 | |
Brand | NXP | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | NXP USA Inc. | |
Series | - | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 800mA | |
Voltage - Collector Emitter Breakdown (Max) | 40V | |
Resistor - Base (R1) | 1 kOhms | |
Resistor - Emitter Base (R2) | 1 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA | |
Current - Collector Cutoff (Max) | 500nA | |
Frequency - Transition | - | |
Power - Max | 700mW | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
Supplier Device Package | TO-92-3 |
PBRN113ES,126 Documents

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Part Number | Description | Stock |
PBRN113ES,126 D# PBRN113ES,126-ND NXP Semiconductors |
TRANS PREBIAS NPN 0.7W TO92-3 |
Limited Supply - Call |
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