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| Part Number | PDTD123ES,126 |
| OEMstron Part # | PDTD123ES-126 |
| Manufacturer | NXP |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
| Description | TRANS PREBIAS NPN 500MW TO92-3 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | PDTD123ES,126 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
PDTD123ES Specifications
| Part Number | PDTD123ES,126 | |
| Brand | NXP | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | NXP USA Inc. | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 2.2 kOhms | |
| Resistor - Emitter Base (R2) | 2.2 kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 500mW | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Supplier Device Package | TO-92-3 |
PDTD123ES,126 Documents
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| Part Number | Description | Stock |
|
PDTD123ES,126 D# PDTD123ES,126-ND NXP Semiconductors |
TRANS PREBIAS NPN 500MW TO92-3 |
Limited Supply - Call |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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