For Reference Only
Part Number | RN1102MFV,L3F |
OEMstron Part # | RN1102MFV-L3F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS NPN 50V 0.15W VESM |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1102MFV,L3F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
RN1102MFV Specifications
Part Number | RN1102MFV,L3F | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 10 kOhms | |
Resistor - Emitter Base (R2) | 10 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
Current - Collector Cutoff (Max) | 500nA | |
Frequency - Transition | - | |
Power - Max | 150mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-723 | |
Supplier Device Package | VESM |
RN1102MFV,L3F Documents
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Part Number | Description | Stock |
RN1102MFV,L3F D# V72:2272_13893397 Toshiba America Electronic Components |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R RoHS: Compliant
|
Americas - 101 |
Part Number | Description | Stock |
RN1102MFV,L3F D# RN1102MFV,L3F Toshiba America Electronic Components |
Trans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1102MFV,L3F) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
RN1102MFV,L3F(B D# C1S751201032520 Toshiba America Electronic Components |
Bipolar Transistor (BJT) Min Qty: 50
Container: Cut Tape
|
33870 |
RN1102MFV,L3F(CT D# C1S751201248051 Toshiba America Electronic Components |
Pre-Biased Bipolar Transistor RoHS: Not Compliant
pbFree: No
Min Qty: 50
Container: Cut Tape
|
55706 |
RN1102MFV,L3F D# C1S751201139355 Toshiba America Electronic Components |
Bipolar Transistor (BJT) Min Qty: 50
Container: Cut Tape
|
7025 |
Part Number | Description | Stock |
RN1102MFV,L3F D# RN1102MFVL3FCT-ND Toshiba America Electronic Components |
TRANS PREBIAS NPN 50V 0.1A VESM |
31315 In Stock |
Part Number | Description | Stock |
RN1102MFVL3FT Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
7903 |
RN1102MFVL3F "TOSHIBA PARTNER" |
OEM/CM QUOTES ONLY | NO BROKERS |
12000 |
Part Number | Description | Stock |
RN1102MFV,L3F D# 757-RN1102MFVL3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant
|
5884 |
Part Number | Description | Stock |
RN1102MFVL3FT Toshiba America Electronic Components |
OEM/CM ONLY |
6602 |
RN1102MFVL3F Toshiba America Electronic Components |
OEM/CM ONLY |
10016 |
Part Number | Description | Stock |
RN1102MFV,L3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor pbFree: Pb-Free
|
Americas - 0 |
RN1102MFVL3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased TRANS pbFree: Pb-Free
|
Americas - 0 |
Part Number | Description | Stock |
RN1102MFV,L3F(B D# 50261155 Toshiba America Electronic Components |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R RoHS: Compliant
|
Americas - 33870 |
RN1102MFV,L3F(CT D# 53464083 Toshiba America Electronic Components |
RN1102MFV,L3F(CT |
Americas - 55706 |
RN1102MFV,L3F D# 43711012 Toshiba America Electronic Components |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R RoHS: Compliant
|
Americas - 7025 |
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Quick Inquiry
In Stock | 466 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Pricing (USD)
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100 | $ 0.0000 | $ 0.0000 |
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