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Part Number | RN1131MFV(TL3,T) |
OEMstron Part # | RN1131MFV-TL3-T |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS NPN 0.15W VESM |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1131MFV(TL3,T) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
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RN1131MFV(TL3 Specifications
Part Number | RN1131MFV(TL3,T) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 100 kOhms | |
Resistor - Emitter Base (R2) | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Frequency - Transition | - | |
Power - Max | 150mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-723 | |
Supplier Device Package | VESM |
RN1131MFV(TL3,T) Documents

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Part Number | Description | Stock |
RN1131MFV(TL3,T) D# RN1131MFV(TL3T)CT-ND Toshiba America Electronic Components |
TRANS PREBIAS NPN 50V 0.1A VESM |
3000 In Stock |
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