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| Part Number | RN1309,LF |
| OEMstron Part # | RN1309-LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
| Description | X34 PB-F USM TRANSISTOR PD 100MW |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN1309,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 3 - Feb 8 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RN1309 Specifications
| Part Number | RN1309,LF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 47 kOhms | |
| Resistor - Emitter Base (R2) | 22 kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | 250MHz | |
| Power - Max | 100mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Supplier Device Package | USM |
RN1309,LF Documents
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