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Part Number | RN1701JE(TE85L,F) |
OEMstron Part # | RN1701JE-TE85L-F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
Description | TRANS 2NPN PREBIAS 0.1W ESV |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1701JE(TE85L,F) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
RN1701JE(TE85L Specifications
Part Number | RN1701JE(TE85L,F) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 4.7kOhms | |
Resistor - Emitter Base (R2) | 4.7kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Frequency - Transition | 250MHz | |
Power - Max | 100mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-553 | |
Supplier Device Package | ESV |
RN1701JE(TE85L,F) Documents
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Part Number | Description | Stock |
RN1701JE(TE85L,F) D# RN1701JE(TE85LF)TR-ND Toshiba America Electronic Components |
TRANS 2NPN PREBIAS 0.1W ESV |
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