For Reference Only
Part Number | RN1902FE,LF(CT |
OEMstron Part # | RN1902FE-LF-CT |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1902FE,LF(CT PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 3 - Feb 8 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
RN1902FE Specifications
Part Number | RN1902FE,LF(CT | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | 2 NPN - Pre-Biased (Dual) | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 10kOhms | |
Resistor - Emitter Base (R2) | 1kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Frequency - Transition | 250MHz | |
Power - Max | 100mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-563, SOT-666 | |
Supplier Device Package | ES6 |
RN1902FE,LF(CT Documents
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Part Number | Description | Stock |
RN1902FE,LF(CT D# V36:1790_23755323 Toshiba America Electronic Components |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
RN1902FE,LF(CT D# RN1902FE,LF(CT Toshiba America Electronic Components |
Transistor Digital BJT NPN 50V 100mA 6-Pin ES6 - Tape and Reel (Alt: RN1902FE,LF(CT) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
RN1902FE,LF(CT D# RN1902FELF(CTCT-ND Toshiba America Electronic Components |
TRANS 2NPN PREBIAS 0.1W ES6 |
952 In Stock |
Part Number | Description | Stock |
RN1902FE,LF(CT D# 757-RN1902FELFCT Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=10kOhm, Q2BSR=10kOhm, Q2BER=10kOhm, VCEO=50V, IC=0.1A RoHS: Compliant
|
9590 |
Part Number | Description | Stock |
RN1902FE.LFCT Toshiba America Electronic Components |
OEM/CM ONLY |
8011 |
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