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| Part Number | RN1910FE(T5L,F,T) |
| OEMstron Part # | RN1910FE-T5L-F-T |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
| Description | TRANS 2NPN PREBIAS 0.1W ES6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN1910FE(T5L,F,T) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RN1910FE(T5L Specifications
| Part Number | RN1910FE(T5L,F,T) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | 250MHz | |
| Power - Max | 100mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 |
RN1910FE(T5L,F,T) Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
RN1910FE(T5L,F,T) D# RN1910FE(T5LFT)CT-ND Toshiba America Electronic Components |
TRANS 2NPN PREBIAS 0.1W ES6 |
905 In Stock |
| Part Number | Description | Stock |
|
RN1910FET5LFT Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
545 |
| Part Number | Description | Stock |
|
RN1910FET5LFT TOSHIBA SEMICONDUCTOR AND STORAGE |
OEM/CM ONLY |
470 |
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