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Part Number | RN4985FE,LF(CT |
OEMstron Part # | RN4985FE-LF-CT |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased |
Description | NPN + PNP BRT Q1BSR2.2KOHM Q1BER |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN4985FE,LF(CT PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
RN4985FE Specifications
Part Number | RN4985FE,LF(CT | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | * | |
Transistor Type | - | |
Current - Collector (Ic) (Max) | - | |
Voltage - Collector Emitter Breakdown (Max) | - | |
Resistor - Base (R1) | - | |
Resistor - Emitter Base (R2) | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
Vce Saturation (Max) @ Ib, Ic | - | |
Current - Collector Cutoff (Max) | - | |
Frequency - Transition | - | |
Power - Max | - | |
Mounting Type | - | |
Package / Case | - | |
Supplier Device Package | - |
RN4985FE,LF(CT Documents
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