Name: RN4987FE,LF(CT
Brand: Toshiba Semiconductor and Storage
SKU: RN4987FE-LF-CT
Rating: 5 (147 reviews)

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Part Number	RN4987FE,LF(CT
OEMstron Part #	RN4987FE-LF-CT
Manufacturer	Toshiba Semiconductor and Storage
Category	Semiconductors › Transistors › Bipolar (BJT) - Arrays, Pre-Biased
Description	TRANS NPN/PNP PREBIAS 0.1W ES6
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RN4987FE,LF(CT PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

Part Number	RN4987FE,LF(CT
Brand	Toshiba Semiconductor and Storage
Lifecycle	Active
RoHS	No RoHS Information
Product Line	Semiconductors
Category	Transistors
Subcategory	Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz, 200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

RN4987FE Specifications