For Reference Only
Part Number | SFA806G C0G |
OEMstron Part # | SFA806G-C0G |
Manufacturer | Taiwan Semiconductor Corporation |
Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Description | DIODE GEN PURP 400V 8A TO220AC |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SFA806G C0G PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
SFA806G C0G Specifications
Part Number | SFA806G C0G | |
Brand | Taiwan Semiconductor Corporation | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Diodes & Rectifiers | |
Subcategory | Rectifiers - Single | |
Manufacturer | Taiwan Semiconductor Corporation | |
Series | - | |
Diode Type | Standard | |
Voltage - DC Reverse (Vr) (Max) | 400V | |
Current - Average Rectified (Io) | 8A | |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 8A | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | 35ns | |
Current - Reverse Leakage @ Vr | 10µA @ 400V | |
Capacitance @ Vr, F | 60pF @ 4V, 1MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 | |
Supplier Device Package | TO-220AC | |
Operating Temperature - Junction | -55°C ~ 150°C |
SFA806G C0G Documents
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Part Number | Description | Stock |
SFA806G C0G D# SFA806G C0G Taiwan Semiconductor |
- Rail/Tube (Alt: SFA806G C0G) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
SFA806G C0G Taiwan Semiconductor |
TO-220AC Diodes - Rectifiers - Hyperfast RoHS |
1829 |
Part Number | Description | Stock |
SFA806G C0G D# SFA806GC0G-ND Taiwan Semiconductor Manufacturing Company Limited |
DIODE GEN PURP 400V 8A TO220AC |
Temporarily Out of Stock |
SFA806GHC0G D# SFA806GHC0G-ND Taiwan Semiconductor Manufacturing Company Limited |
DIODE GEN PURP 400V 8A TO220AC |
Temporarily Out of Stock |
Part Number | Description | Stock |
SFA806G C0G D# C483975 Taiwan Semiconductor |
1829 |
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