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For Reference Only
| Part Number | SI1905BDH-T1-E3 |
| OEMstron Part # | SI1905BDH-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2P-CH 8V 0.63A SC70-6 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI1905BDH-T1-E3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI1905BDH-T1-E3 Specifications
| Part Number | SI1905BDH-T1-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 8V | |
| Current - Continuous Drain (Id) @ 25°C | 630mA | |
| Rds On (Max) @ Id, Vgs | 542mOhm @ 580mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 4V | |
| Power - Max | 357mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | SC-70-6 (SOT-363) |
SI1905BDH-T1-E3 Documents
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SI1905BDH-T1-E3 Vishay Intertechnologies |
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SI1905BDH-T1-E3 Vishay Siliconix |
MOSFET 2P-CH 8V 630MA SC70-6 |
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| Part Number | Description | Stock |
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SI1905BDH-T1-E3 D# SI1905BDH-T1-E3-ND Vishay Siliconix |
MOSFET 2P-CH 8V 0.63A SC70-6 |
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