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| Part Number | SI3529DV-T1-E3 |
| OEMstron Part # | SI3529DV-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET N/P-CH 40V 2.5A 6-TSOP |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI3529DV-T1-E3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI3529DV-T1-E3 Specifications
| Part Number | SI3529DV-T1-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 1.95A | |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.2A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 205pF @ 20V | |
| Power - Max | 1.4W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP |
SI3529DV-T1-E3 Documents
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| Part Number | Description | Stock |
|
SI3529DV-T1-E3 Vishay Siliconix |
MOSFET N/P-CH 40V 2.5A 6-TSOP |
Contact Us |
| Part Number | Description | Stock |
|
SI3529DV-T1-E3 D# SI3529DV-T1-E3-ND Vishay Siliconix |
MOSFET N/P-CH 40V 2.5A 6-TSOP |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SI3529DV-T1-E3 D# NS-SI3529DV-T1-E3 Vishay Siliconix |
OEM/CM ONLY |
5163 |
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