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| Part Number | SI4500BDY-T1-GE3 |
| OEMstron Part # | SI4500BDY-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET N/P-CH 20V 6.6A 8-SOIC |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI4500BDY-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 25 - Mar 2 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI4500BDY-T1-GE3 Specifications
| Part Number | SI4500BDY-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N and P-Channel, Common Drain | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 3.8A | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1.3W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
SI4500BDY-T1-GE3 Documents
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