For Reference Only
Part Number | SI4561DY-T1-GE3 |
OEMstron Part # | SI4561DY-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | MOSFET N/P-CH 40V 6.8A 8-SOIC |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI4561DY-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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SI4561DY-T1-GE3 Specifications
Part Number | SI4561DY-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N and P-Channel | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 6.8A, 7.2A | |
Rds On (Max) @ Id, Vgs | 35.5mOhm @ 5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 20V | |
Power - Max | 3W, 3.3W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Supplier Device Package | 8-SO |
SI4561DY-T1-GE3 Documents
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Part Number | Description | Stock |
SI4561DY-T1-GE3 Vishay Siliconix |
N-CH/P CHANNEL MOSFET, 40V, SOIC, Transistor Polarity:N and P Channel, Continuous Drain Current Id:6.8A, Drain Source Voltage Vds:40V, On Resistance Rds(on):29.5mohm, Rds(on) Test Voltage Vgs:20V, Threshold Voltage Vgs:3V , RoHS Compliant: Yes |
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SI4561DY-T1-GE3 D# SI4561DY-T1-GE3TR-ND Vishay Siliconix |
MOSFET N/P-CH 40V 6.8A 8-SOIC |
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