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| Part Number | SI4936BDY-T1-GE3 |
| OEMstron Part # | SI4936BDY-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 30V 6.9A 8-SOIC |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI4936BDY-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI4936BDY-T1-GE3 Specifications
| Part Number | SI4936BDY-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 6.9A | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 15V | |
| Power - Max | 2.8W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
SI4936BDY-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 D# V72:2272_09216673 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R RoHS: Compliant
|
Americas - 1874 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 D# SI4936BDY-T1-GE3 Vishay Intertechnologies |
Transistor MOSFET Array Dual N-Channel 30V 5.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936BDY-T1-GE3) |
Americas - 0 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 Vishay Siliconix |
DUAL N-CHANNEL 30-V(D-S) MOSFET - Tape and Reel |
Contact Us |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 D# SI4936BDY-T1-GE3CT-ND Vishay Siliconix |
MOSFET 2N-CH 30V 6.9A 8-SOIC |
2405 In Stock |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
76325 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 D# 26R1899 Vishay Intertechnologies |
DUAL N CHANNEL MOSFET, 30V, 6.9A, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:6.9A, On Resistance Rds(on):0.051ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 2500
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 D# NS-SI4936BDY-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
2843 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
76310 |
| Part Number | Description | Stock |
|
SI4936BDY-T1-GE3 D# 25790203 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R RoHS: Compliant
|
Americas - 1874 |
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| In Stock | 450 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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