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| Part Number | SI8900EDB-T2-E1 |
| OEMstron Part # | SI8900EDB-T2-E1 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 20V 5.4A 10-MFP |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI8900EDB-T2-E1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI8900EDB-T2-E1 Specifications
| Part Number | SI8900EDB-T2-E1 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5.4A | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | 1V @ 1.1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 10-UFBGA, CSPBGA | |
| Supplier Device Package | 10-Micro Foot™ CSP (2x5) |
SI8900EDB-T2-E1 Documents
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| Part Number | Description | Stock |
|
SI8900EDB-T2-E1 Vishay Siliconix |
MOSFET 2N-CH 20V 5.4A 10-MFP |
Contact Us |
| Part Number | Description | Stock |
|
SI8900EDB-T2-E1 D# SI8900EDB-T2-E1TR-ND Vishay Siliconix |
MOSFET 2N-CH 20V 5.4A 10-MFP |
Temporarily Out of Stock |
| Part Number | Description | Stock |
|
SI8900EDB-T2-E1 D# NS-SI8900EDB-T2-E1 Vishay Siliconix |
OEM/CM ONLY |
8984 |
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