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| Part Number | SIDC30D120E6X1SA2 |
| OEMstron Part # | SIDC30D120E6X1SA2 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Description | DIODE GEN PURP 1.2KV 35A WAFER |
| Lifecycle | Discontinued |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIDC30D120E6X1SA2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 29 - Dec 4 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIDC30D120E6X1SA2 Specifications
| Part Number | SIDC30D120E6X1SA2 | |
| Brand | Infineon Technologies | |
| Lifecycle | Discontinued | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Diodes & Rectifiers | |
| Subcategory | Rectifiers - Single | |
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1200V | |
| Current - Average Rectified (Io) | 35A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 35A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 27µA @ 1200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Sawn on foil | |
| Operating Temperature - Junction | -55°C ~ 150°C |
SIDC30D120E6X1SA2 Documents
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