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| Part Number | SIZF920DT-T1-GE3 |
| OEMstron Part # | SIZF920DT-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET DL N-CH 30V POWERPAIR 6X5 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIZF920DT-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIZF920DT-T1-GE3 Specifications
| Part Number | SIZF920DT-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® Gen IV | |
| FET Type | 2 N-Channel (Dual), Schottky | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V, 125nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V, 5230pF @ 15V | |
| Power - Max | 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerWDFN | |
| Supplier Device Package | 8-PowerPair® (6x5) |
SIZF920DT-T1-GE3 Documents
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