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SQJ262EP-T1_GE3

SQJ262EP-T1_GE3
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Part Number SQJ262EP-T1_GE3
OEMstron Part # SQJ262EP-T1_GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2 N-CH 60V POWERPAK SO8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SQJ262EP-T1_GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SQJ262EP-T1_GE3 Specifications

Part Number SQJ262EP-T1_GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V, 1260pF @ 25V
Power - Max 27W (Tc), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric

SQJ262EP-T1_GE3 Documents

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