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For Reference Only
| Part Number | STGWA80H65DFB |
| OEMstron Part # | STGWA80H65DFB |
| Manufacturer | STMicroelectronics |
| Category | Semiconductors › Transistors › IGBTs - Single |
| Description | IGBT BIPO 650V 80A TO247-3 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | STGWA80H65DFB PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 25 - Mar 2 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
STGWA80H65DFB Specifications
| Part Number | STGWA80H65DFB | |
| Brand | STMicroelectronics | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | IGBTs - Single | |
| Manufacturer | STMicroelectronics | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 120A | |
| Current - Collector Pulsed (Icm) | 240A | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A | |
| Power - Max | 469W | |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 414nC | |
| Td (on/off) @ 25°C | 84ns/280ns | |
| Test Condition | 400V, 80A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | 85ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 Long Leads |
STGWA80H65DFB Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
STGWA80H65DFB D# V99:2348_17623314 STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant
|
Americas - 588 |
| Part Number | Description | Stock |
|
STGWA80H65DFB D# STGWA80H65DFB STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGWA80H65DFB) |
Europe - 0 |
| Part Number | Description | Stock |
|
STGWA80H65DFB STMicroelectronics |
Insulated Gate Bipolar Transistor RoHS: Compliant
|
Europe - 600 |
| Part Number | Description | Stock |
|
STGWA80H65DFB D# 497-16007-5-ND STMicroelectronics |
IGBT BIPO 650V 80A TO247-3 |
242 In Stock |
| Part Number | Description | Stock |
|
STGWA80H65DFB STMicroelectronics |
RoHS: Compliant
pbFree: Yes
|
0 |
| Part Number | Description | Stock |
|
STGWA80H65DFB STMicroelectronics |
OEM/CM QUOTES ONLY | NO BROKERS |
4284 |
| Part Number | Description | Stock |
|
STGWA80H65DFB D# 511-STGWA80H65DFB STMicroelectronics |
IGBT Transistors PTD IGBT & IPM RoHS: Compliant
|
132 |
| Part Number | Description | Stock |
|
STGWA80H65DFB STMicroelectronics |
OEM/CM ONLY |
1196 |
| Part Number | Description | Stock |
|
STGWA80H65DFB D# 25947925 STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant
|
Americas - 588 |
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Quick Inquiry
| In Stock | 747 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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